SSM3J13T power management switch high speed switching applications small package low on resistance : r on = 70 m ? (max) (@v gs = ? 4 v) : r on = 95 m ? (max) (@v gs = ? 2.5 v) low gate threshold voltage maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v ds 12 v gate-source voltage v gss 8 v dc i d 3.0 drain current pulse i dp (note 2) 6.0 a drain power dissipation p d (note 1) 1.25 w channel temperature t ch 150 c storage temperature range t stg 55~150 c note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 , t 10 s) note 2: the pulse width limited by max channel temperature. marking equivalent circuit handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. when using this device, please take heat dissipation fully into account unit: mm weight: 10 mg (typ.) 3 1 2 kdh 3 12 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (ta 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs 8 v, v ds 0 1 a v (br) dss i d 1 ma, v gs 0 12 v drain-source breakdown voltage v (br) dsx i d 1 ma, v gs 8 v 4 v drain cut-off current i dss v ds 12 v, v gs 0 1 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.45 1.1 v forward transfer admittance |y fs | v ds 3 v, i d 1.5 a (note 3) 3.8 s i d 1.5 a, v gs 4 v (note 3) 50 70 i d 1.5 a, v gs 2.5 v (note 3) 70 95 drain-source on resistance r ds (on) i d 1.5 a, v gs 2.0 v (note 3) 90 180 m input capacitance c iss v ds 10 v, v gs 0, f 1 mhz 890 pf reverse transfer capacitance c rss v ds 10 v, v gs 0, f 1 mhz 203 pf output capacitance c oss v ds 10 v, v gs 0, f 1 mhz 288 pf turn-on time t on 48 switching time turn-off time t off v dd 10 v, i d 1 a v gs 0~ 2.5 v, r g 4.7 120 ns note 3: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d 1 00 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 2.5 v or higher to turn on this product. t on t off (b) v in (c) v out 0 v 2.5 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd 10 v r g 4.7 d.u. 1% v in : t r , t f 5 ns common source ta 25c 0 2.5 v in out v dd 10 s r g 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3J13T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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